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參數(shù)資料
| 型號： | 934056954118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 274K |
| 代理商： | 934056954118 |
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 06 November 2001
7 of 13
9397 750 09024
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
max
typ
min
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
VGS (V)
ID
(A)
max
typ
min
03ah53
10
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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