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參數(shù)資料
| 型號： | 934056954118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 274K |
| 代理商： | 934056954118 |
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 06 November 2001
3 of 13
9397 750 09024
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tamb =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
oC)
Pder
(%)
03aa24
0
40
80
120
0
50
100
150
200
Tmb (
oC)
I der
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ah48
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
10 ms
RDSon = VDS / ID
1 ms
tp = 10 s
100 s
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