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參數(shù)資料
| 型號(hào)： | 934056996215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 385 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 276K |
| 代理商： | 934056996215 |
Philips Semiconductors
2N7002E
TrenchMOS Logic Level FET
Product data
Rev. 01 — 11 February 2002
3 of 11
9397 750 09095
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse; VGS = 10 V.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
120
0
50
100
150
200
Tsp (
oC)
Pder
(%)
03aa25
0
40
80
120
0
50
100
150
200
Tsp (
oC)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ai10
10-2
10-1
1
10
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 s
100 s
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