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參數(shù)資料
| 型號： | 934056996215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 385 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 276K |
| 代理商： | 934056996215 |
Philips Semiconductors
2N7002E
TrenchMOS Logic Level FET
Product data
Rev. 01 — 11 February 2002
5 of 11
9397 750 09095
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID =10 A; VGS =0V
Tj =25 °C60
75
-
V
Tj = 55 °C55
-
V
VGS(th)
gate-source threshold voltage
Tj =25 °C1
2
-
V
Tj = 150 °C
0.6
-
V
Tj = 55 °C
-
3.5
V
IDSS
drain-source leakage current
VDS =48V; VGS =0V
Tj =25 °C
-
0.01
1.0
A
Tj = 150 °C-
-
10
A
IGSS
gate-source leakage current
VGS = ±15 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
2.3
3
Tj = 150 °C
-
4.2
5.55
Tj =25 °C
-
3.1
4
Dynamic characteristics
gfs
forward transconductance
VDS =10V; ID = 200 mA
100
300
-
mS
Ciss
input capacitance
-25
40
pF
Coss
output capacitance
-
18
30
pF
Crss
reverse transfer capacitance
-
7.5
10
pF
ton
turn-on time
VDD = 50 V; RD = 250 ; VGS =10V;
RG =50 ; RGS =50
-
3
10
ns
toff
turn-off time
-12
15
ns
Source-drain diode
VSD
-
0.85
1.5
V
trr
reverse recovery time
IS = 300 mA; dIS/dt = 100 A/s; VGS =0V;
VDS =25V
-30
-
ns
Qr
recovered charge
-
30
-
nC
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