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| 型號： | 934056996215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 385 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 276K |
| 代理商： | 934056996215 |
Philips Semiconductors
2N7002E
TrenchMOS Logic Level FET
Product data
Rev. 01 — 11 February 2002
6 of 11
9397 750 09095
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °C.
Tj =25 °C and 150 °C; VDS > ID × RDSon.
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C.
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ai12
0
0.2
0.4
0.6
0.8
1
0
0.8
1.6
2.4
3.2
VDS (V)
ID
(A)
3 V
Tj = 25
oC
VGS = 2.5 V
3.5 V
4 V
10 V
4.5 V
5 V
6 V
7 V
03ai16
0
0.2
0.4
0.6
0.8
0246
VGS (V)
ID
(A)
VDS > ID X RDSon
Tj = 25
oC
150
oC
03ai14
0
2
4
6
0
0.2
0.4
0.6
0.8
1
ID (A)
RDSon
(
)
VGS = 3.5 V
Tj = 25
oC
4.5 V
4 V
7 V
6 V
5 V
10 V
!== &
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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