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參數(shù)資料
| 型號(hào)： | 934056997215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 475 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 276K |
| 代理商： | 934056997215 |
Philips Semiconductors
2N7002F
TrenchMOS Logic Level FET
Product data
Rev. 01 — 11 February 2002
2 of 11
9397 750 09096
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
-
60
V
ID
drain current (DC)
Tsp =25 °C; VGS = 10 V
-
475
mA
Ptot
total power dissipation
Tsp =25 °C
-
0.83
W
Tj
junction temperature
-
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 500 mA; Tj = 25
1.7
2
VGS = 4.5 V; ID = 75 mA; Tj = 25
2.25
4
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
-
60
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
-60
V
VGS
gate-source voltage (DC)
-
±30
V
VGSM
peak gate-source voltage
tp ≤ 50 s; pulsed; duty cycle = 25%
-
±40
V
ID
drain current (DC)
-
475
mA
-
300
mA
IDM
peak drain current
-
1.9
A
Ptot
total power dissipation
-
0.83
W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
-
475
mA
ISM
peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 s
-
1.9
A
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