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| 型號(hào)： | 934056997215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 475 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁(yè)數(shù)： | 9/11頁(yè) |
| 文件大小： | 276K |
| 代理商： | 934056997215 |
Philips Semiconductors
2N7002F
TrenchMOS Logic Level FET
Product data
Rev. 01 — 11 February 2002
7 of 11
9397 750 09096
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS.Tj =25 °C; VDS =5V.
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS = 0 V; f = 1 MHz.
Tj =25 °C and 150 °C; VGS =0V.
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
!==!"
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
typ
min
!==!%
10-6
10-5
10-4
10-3
10-2
10-1
0
0.6
1.2
1.8
2.4
VGS (V)
ID
(A)
typ
min
03ai18
1
10
102
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
03ai17
0
0.2
0.4
0.6
0.8
0
0.4
0.8
1.2
VSD (V)
IS
(A)
Tj = 25
oC
150
oC
VGS = 0 V
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