參數(shù)資料
型號(hào): 934057014127
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 869 MHz - 894 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SOT-365C, 3 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 94K
代理商: 934057014127
2003 Feb 24
2
Philips Semiconductors
Product specication
CDMA800 power module
BGF802-20
FEATURES
Typical CDMA IS95 performance at a supply voltage of
28 V:
– Output power = 3 W
– Gain = 30 dB
– Efficiency = 18%
– ACPR < -53 dBc at 750 kHz and BW = 30 kHz
– ACPR < -69 dBc at 1.98 MHz and BW = 30 kHz.
Low distortion to CDMA signals
Excellent 2-tone performance
Low die temperatures using copper flange
Integrated temperature compensated bias
50 input/output system
Flat gain over frequency range.
APPLICATIONS
Base station RF power amplifiers in the 869 to 894 MHz
frequency range
CDMA IS95, CDMA2000, multi carrier applications
Macrocell (driver stage) and Microcell (final stage).
DESCRIPTION
25 W LDMOS power amplifier module for base station
amplifier applications in the 869 to 894 MHz range.
PINNING - SOT365C
PIN
DESCRIPTION
1
RF input
2VS
3
RF output
Flange
ground
23
1
Top view
MBL257
Fig.1 Simplified outline.
QUICK REFERENCE DATA
Typical RF performance at Tmb =25 °C.
Notes
1. IS95 CDMA (Pilot, paging, sync and traffic codes 8
13).
2. ACPR 750 kHz at 30 kHz resolution bandwidth.
3. ACPR 1.98 MHz at 30 kHz resolution bandwidth.
4. ACPR 400 kHz at 30 kHz resolution bandwidth.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
(%)
ACPR
(dBc)
EVM
(%)
CW
869 to 894
28
25
29
48
IS95 CDMA(1)
869 to 894
28
3
30
18
53(2)
69(3)
GSM EDGE
869 to 894
26
2.5
30
16
65(4)
0.4
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