參數(shù)資料
型號: 934057014127
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 869 MHz - 894 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SOT-365C, 3 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 94K
代理商: 934057014127
2003 Feb 24
5
Philips Semiconductors
Product specication
CDMA800 power module
BGF802-20
handbook, halfpage
04
8
16
30.4
30
29.2
28.8
29.6
48
36
12
0
24
12
MBL766
Gp
(dB)
Gp
η
(%)
PL (AV) (W)
Fig.6
Two tone power gain and efficiency as
functions of load power; typical values.
f1 = 882 MHz; f2 = 883 MHz.
handbook, halfpage
04
8
16
20
70
30
dim
(dBc)
PL (AV) (W)
12
40
50
60
MBL767
d3
d5
d7
Fig.7
Two tone intermodulation distortion as
function of load power; typical values.
f1 = 882 MHz; f2 = 883 MHz.
handbook, halfpage
58
0
PL (AV) (W)
412
68
8
26
10
66
64
62
60
MBL768
ACPR400 kHz
(dBc)
Fig.8
GSM EDGE ACPR at 400 kHz as a function
of load power; typical values.
f = 882 MHz.
handbook, halfpage
04
12
4
EVMrms
(%)
PL (AV) (W)
3
1
0
2
8
26
10
MBL769
Fig.9
GSM EDGE rms EVM as a function of load
power; typical values.
f = 882 MHz.
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