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參數(shù)資料
| 型號： | 934057014127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 869 MHz - 894 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365C, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 934057014127 |
2003 Feb 24
3
Philips Semiconductors
Product specication
CDMA800 power module
BGF802-20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tmb =25 °C; VS = 28 V; PL = 3.0 W; f = 869 to 894 MHz; ZS =ZL =50 ; unless otherwise specied.
Note
1. GPi is small signal in-band gain.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VS
DC supply voltage
30
V
PD
input drive power
100
mW
PL
load power
30
W
Tstg
storage temperature
30
+100
°C
Tmb
operating mounting base temperature
20
+90
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDQ
quiescent current (pin 2)
PD = 0 mW
245
280
320
mA
P1dB
load power
at 1 dB gain compression
18
25
W
Gp
power gain
28
30
32
dB
G
p freq
gain atness over
frequency range
0.2
1.0
dB
G
p pwr
gain atness over power
band
PL = 30 mW up to 3 W
0.8
0.2
dB
freq
phase linearity over
frequency range
0.2
deg
delay atness
200
ps
GOB
out of band gain
small signal, PD = 0 dBm;
f < 869 MHz, f > 894 MHz
GPi max +1
note 1
dB
VSWRin
input VSWR
1.6:1
2.0:1
H2
second harmonic
37
34
dBc
H3
third harmonic
61
58
dBc
stability
VSWR
≤ 3 : 1 through all
phases; VS2 =25to28V
all spurious outputs more than 60 dB
below desired signal
ruggedness
VSWR = 10 : 1 through all
phases; PL =5W
no degradation in output power
IS95 CDMA (PL = 3 W average)
η
efciency
15
18
%
ACPR 750 kHz
spectral regrowth;
measured in 30 kHz RBW
53
49
dBc
ACPR 1.98 MHz
69
66
dBc
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