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| 型號(hào)： | 934057019118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 11/14頁(yè) |
| 文件大小： | 301K |
| 代理商： | 934057019118 |
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Philips Semiconductors
BUK95/9609-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 21 February 2002
6 of 14
9397 750 09229
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
-
0.85
1.2
V
trr
reverse recovery time
IS =25A; dIS/dt = 100 A/s
VGS = 10 V; VDS =25V
-70
-
ns
Qr
recovered charge
-
160
-
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
a=RDSon/RDSon(25 °C)
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nh64
0
100
200
300
02
46
8
10
VDS (V)
ID
(A)
4.6
4.8
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
5
10
label is VGS (V)
03nh63
5
7
9
11
0
5
10
15
VGS (V)
RDSon
(m
9)
03nh65
5
10
15
20
25
0
100
200
300
ID (A)
RDSon
(m
9)
VGS = 3 V
3.2 V
3.4 V
3.6 V
4 V
5 V
10 V
handbook, halfpage
-60
0
60
180
2
1.5
0.5
0
1
120
03ne89
a
Tj (°C)
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