參數(shù)資料
型號(hào): 934057019118
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: 75 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-3
文件頁(yè)數(shù): 13/14頁(yè)
文件大?。?/td> 301K
代理商: 934057019118
Philips Semiconductors
BUK95/9609-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 21 February 2002
8 of 14
9397 750 09229
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03nh62
0
40
80
120
012
3
4
VGS (V)
ID
(A)
175
°C
Tj = 25 °C
handbook, halfpage
020
40
60
5
0
4
3
2
1
03nh60
VGS
(V)
QG (nC)
VDD = 14 V
44 V
03nh59
0
25
50
75
100
0.0
0.3
0.6
0.9
1.2
VSD (V)
IS
(A)
175
°C
Tj = 25 °C
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