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參數(shù)資料
| 型號(hào)： | 934057019118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 301K |
| 代理商： | 934057019118 |
Philips Semiconductors
BUK95/9609-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 21 February 2002
2 of 14
9397 750 09229
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
Current is limited by power dissipation chip rating
[2]
Continuous current is limited by package.
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
ID
drain current (DC)
Tmb =25 °C; VGS = 5 V
-
108
A
Ptot
total power dissipation
Tmb =25 °C
-
211
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID =25A
7.6
9
m
Tj =25 °C; VGS = 4.5 V; ID =25A
-
10
m
Tj =25 °C; VGS = 10 V; ID =25A
6.4
8
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
-55
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
-
108
A
-75
A
-75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
-
433
A
Ptot
total power dissipation
-
211
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-
108
A
-75
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
433
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =75A;
VDS ≤ 55 V; VGS =5V; RGS =50 ;
starting Tmb =25 °C
-
400
mJ
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