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參數(shù)資料
| 型號： | 934057040127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 279K |
| 代理商： | 934057040127 |
Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 26 April 2002
3 of 13
9397 750 09156
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (C)
Pder
(%)
03ah79
0
20
40
60
80
100
120
0
30
60
90
120
150
180
Tmb (C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ah81
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
Limit RDSon = VDS/ID
1 ms
tp = 10 s
100 s
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