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參數(shù)資料
| 型號： | 934057040127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 279K |
| 代理商： | 934057040127 |
Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 26 April 2002
5 of 13
9397 750 09156
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C60
-
V
Tj = 55 °C54
-
V
VGS(th)
gate-source threshold voltage
Tj =25 °C2
3
4
V
Tj = 175 °C1
-
V
Tj = 55 °C
-
4.4
V
IDSS
drain-source leakage current
VDS = 30 V; VGS =0V
Tj =25 °C
-
0.02
1
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
3.1
3.6
m
Tj = 175 °C
-
6.5
7.55
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 75 A; VDD =48V; VGS =10V;
-
168
-
nC
Qgs
gate-source charge
-
36
-
nC
Qgd
gate-drain (Miller) charge
-
54
-
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz;
-8300
-pF
Coss
output capacitance
-
1050
-
pF
Crss
reverse transfer capacitance
-
550
-
pF
td(on)
turn-on delay time
VDD = 15 V; ID = 12 A; VGS =10V;
RG =6 ; resistive load
-38
-
ns
tr
rise time
-74
-
ns
td(off)
turn-off delay time
-
133
-
ns
tf
all time
-75
-
ns
Source-drain diode
VSD
-
0.8
1.2
V
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