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| 型號(hào)： | 934057040127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大小： | 279K |
| 代理商： | 934057040127 |
Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 26 April 2002
6 of 13
9397 750 09156
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS >ID x RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ah82
0
100
200
300
0
0.4
0.8
1.2
1.6
2
VDS (V)
ID
(A)
5.5 V
6 V
Tj = 25 C
20V
5 V
6.5 V
8 V
7.5 V
10 V
7 V
VGS = 4.5 V
03ah84
0
20
40
60
80
100
012
3456
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 175 C
25 C
o3ah83
0
0.005
0.01
0.015
0
100
200
300
ID (A)
RDSon
(
)
VGS = 20 V
Tj = 25 C
7 V
8 V
6.5 V
5.5 V
6 V
5 V
10 V
!== &
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
a
Tj (°C)
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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