參數(shù)資料
型號(hào): 934057125118
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: 27 A, 75 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-3
文件頁(yè)數(shù): 10/13頁(yè)
文件大?。?/td> 262K
代理商: 934057125118
Philips Semiconductors
PHP/PHB29N08T
TrenchMOS standard level FET
Product data
Rev. 01 — 29 May 2002
6 of 13
9397 750 09651
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID xRDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aj07
0
10
20
30
0
0.5
1
1.5
2
VDS (V)
ID
(A)
6.5 V
Tj = 25 °C
VGS = 6 V
11 V
7 V
7.5 V
8 V
9 V
03aj09
0
10
20
30
02
46
8
10
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 °C
175
°C
03aj08
20
40
60
80
0
102030
ID (A)
RDSon
(m
)
8 V
VGS = 7 V
Tj = 25 °C
9 V
11 V
7.5 V
03ac63
0
1
2
3
-60
0
60
120
180
Tj (
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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