參數(shù)資料
型號： 934057125118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 27 A, 75 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SMD, D2PAK-3
文件頁數(shù)： 6/13頁
文件大?。?/td> 262K
代理商： 934057125118
Philips Semiconductors
PHP/PHB29N08T
TrenchMOS standard level FET
Product data
Rev. 01 — 29 May 2002
2 of 13
9397 750 09651
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 175 °C
-
75
V
ID
drain current (DC)
Tmb =25 °C; VGS =11V
-
27
A
Ptot
total power dissipation
Tmb =25 °C
-
88
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
VGS = 11 V; ID =14A
Tj =25 °C
4050m
Tj = 175 °C
96
120
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj ≤ 175 °C
-
75
V
VDGR
drain-gate voltage (DC)
25
°C ≤ Tj ≤ 175 °C; RGS =20k
-75
V
VGS
gate-source voltage
-
±30
V
ID
drain current (DC)
Tmb =25 °C; VGS =11V; Figure 2 and 3
-27
A
Tmb = 100 °C; VGS =11V; Figure 2
-
19.2
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s; Figure 3
-
108
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
-88
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
27
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
108
A
相關(guān)PDF資料
PDF描述
0620420000 41 A, STRIP TERMINAL BLOCK, 2 ROWS, 1 DECK
934057159315 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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934043590115 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
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