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參數(shù)資料
| 型號： | 934057125118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 27 A, 75 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 262K |
| 代理商： | 934057125118 |
Philips Semiconductors
PHP/PHB29N08T
TrenchMOS standard level FET
Product data
Rev. 01 — 29 May 2002
5 of 13
9397 750 09651
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
75
--V
Tj = 55 °C
70
--V
VGS(th)
gate-source threshold voltage
Tj =25 °C
345V
Tj = 175 °C
2.1
-
V
Tj = 55 °C
-
5.4
V
IDSS
drain-source leakage current
VDS =75V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
40
50
m
Tj = 175 °C
-
96
120
m
Dynamic characteristics
Qg(tot)
total gate charge
-19
-
nC
Qgs
gate-source charge
-
6
-
nC
Qgd
gate-drain (Miller) charge
-
9
-
nC
Ciss
input capacitance
-
810
-
pF
Coss
output capacitance
-
140
-
pF
Crss
reverse transfer capacitance
-
85
-
pF
td(on)
turn-on delay time
VDD = 37.5 V; ID =29A;
VGS =10V;RG = 5.6
-
9.5
-
ns
tr
rise time
-70
-
ns
td(off)
turn-off delay time
-
15
-
ns
tf
fall time
-9
-ns
Source-drain diode
VSD
-
0.95
1.2
V
trr
reverse recovery time
IS = 14 A; dIS/dt = 100 A/s; VGS =0V
-
50
-
ns
Qr
recovered charge
65
-
nC
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