參數(shù)資料
型號(hào)： 934057621115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 125 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-88, UMT6, 6 PIN
文件頁(yè)數(shù)： 11/15頁(yè)
文件大?。?/td> 302K
代理商： 934057621115
Philips Semiconductors
PMGD8000LN
Dual
TrenchMOS logic level FET
Product data
Rev. 01 — 27 February 2003
5 of 12
9397 750 10939
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID =10 A; VGS =0V
30
-
V
VGS(th)
gate-source threshold voltage
ID = 100 A; VDS =VGS; Figure 9
0.8
-
1.5
V
IDSS
drain-source leakage current
VDS =30V; VGS =0V
Tj =25 °C
-
0.01
1.0
A
Tj =55 °C
--10
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
VGS =4V; ID =10mA; Figure 7 and 8
Tj =25 °C
-
1.8
8
Tj = 150 °C
-
2.9
12.8
VGS = 2.5 V; ID = 1 mA; Figure 7 and 8
Tj =25 °C
-
2.9
13
Tj = 150 °C
-
4.6
21
Dynamic characteristics
Qg(tot)
total gate charge
VDD =10V; VGS = 4.5 V; ID = 0.1 A; Figure 13
-
350
-
pC
Qgs
gate-source charge
-
60
-
pC
Qgd
gate-drain (Miller) charge
-
120
-
pC
Ciss
input capacitance
VGS =0V; VDS = 5 V; f = 1 MHz; Figure 11
-
18.5
-
pF
Coss
output capacitance
-
12.5
-
pF
Crss
reverse transfer capacitance
-
9
-
pF
td(on)
turn-on delay time
VDD =3V; RL = 100 ; VGS = 4.5 V; RG =6
-10
-
ns
tr
rise time
-7
-ns
td(off)
turn-off delay time
-
15
-
ns
tf
fall time
-7
-ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 0.1 A; VGS =0V; Figure 12
-
0.77
1.35
V
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