參數(shù)資料
型號(hào)： 934057621115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 125 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-88, UMT6, 6 PIN
文件頁數(shù)： 8/15頁
文件大?。?/td> 302K
代理商： 934057621115
Philips Semiconductors
PMGD8000LN
Dual
TrenchMOS logic level FET
Product data
Rev. 01 — 27 February 2003
2 of 12
9397 750 10939
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j 150 °C
-
30
V
ID
drain current (DC)
Tamb =25 °C; VGS = 4 V
-
125
mA
Ptot
total power dissipation
Tamb =25 °C
-
0.2
W
Tj
junction temperature
-
150
°C
RDSon
drain-source on-state resistance
VGS =4V; ID =10mA
1.8
8
VGS = 2.5 V; ID = 1 mA
2.9
13
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj 150 °C
-
30
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tamb =25 °C; VGS =4V; Figure 2 and 3
-
125
mA
Tamb =70 °C; VGS =4V; Figure 2
-
100
mA
IDM
peak drain current
Tamb =25 °C; pulsed; tp ≤ 10 s; Figure 3
-
250
mA
Ptot
total power dissipation
Tamb =25 °C; Figure 1
-
0.2
W
Tstg
storage temperature
55
+150
°C
Tj
junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tamb =25 °C
-
125
mA
相關(guān)PDF資料
PDF描述
0636620000 200 A, MODULAR TERMINAL BLOCK, 1 DECK
9340FMQB 93 SERIES, 4-BIT ARITHMETIC LOGIC UNIT, INVERTED OUTPUT, PDFP24
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