參數(shù)資料
型號： 934057621115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 125 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-88, UMT6, 6 PIN
文件頁數(shù)： 12/15頁
文件大小： 302K
代理商： 934057621115
Philips Semiconductors
PMGD8000LN
Dual
TrenchMOS logic level FET
Product data
Rev. 01 — 27 February 2003
6 of 12
9397 750 10939
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ah14
0
0.05
0.1
0.15
0.2
0.25
0
0.2
0.4
0.6
VDS (V)
ID
(A)
5 V
VGS = 2.5 V
3.5 V
3 V
4 V
03ah16
0
0.1
0.2
0.3
0.4
0.5
012
34
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 150 °C
25
°C
03ah15
0
1
2
3
4
0
0.05
0.1
0.15
0.2
0.25
ID (A)
RDSon
(
)
Tj = 25 °C
VGS = 2.5 V
3 V
3.5 V
4 V
5 V
03af18
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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