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參數資料
| 型號： | 935233300112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PROM |
| 英文描述： | 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 |
| 封裝： | DIP-8 |
| 文件頁數： | 2/23頁 |
| 文件大小： | 185K |
| 代理商： | 935233300112 |
1997 Apr 02
10
Philips Semiconductors
Product specication
2048
× 8-bit CMOS EEPROM with I2C-bus
interface
PCF85116-3
9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. ESD Human Body model Q22 at Tamb =22 °C; discharge procedure according to MIL-STD-883C Method 3015.
10 CHARACTERISTICS
VDD = 2.7 to 5.5 V; VSS =0V; Tamb = 40 to +85 °C; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDD
supply voltage
0.3
+6.5
V
VI
input voltage on any pin
Zi > 500
VSS 0.8
+6.5
V
II
input current on any pin
1mA
IO
output current
10
mA
Tstg
storage temperature
65
+150
°C
Tamb
operating ambient temperature
40
+85
°C
Vesd
electrostatic discharge voltage
note 1
2
kV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Supplies
VDD
supply voltage
2.7
5.5
V
IDDR
supply current read
fSCL = 400 kHz;
VDD = 5.5 V
1.0
mA
IDDW
supply current E/W
fSCL = 400 kHz;
VDD = 5.5 V
1.0
mA
IDD(stb)
standby supply current
VDD = 2.7 V
6
A
VDD = 5.5 V
10
A
SDA input/output (pin 5)
VIL
LOW level input voltage
0.8
+0.3VDD
V
VIH
HIGH level input voltage
0.7VDD
6.5
V
VOL1
LOW level output voltage
IOL = 3 mA; VDD(min)
0.4
V
VOL2
IOL = 6 mA; VDD(min)
0.6
V
ILO
output leakage current
VOH =VDD
1
A
to(f)
output fall time from VIHmin to VILmax
note 1
with up to 3 mA sink current at VOL1
20 + 0.1Cb 250
ns
with up to 6 mA sink current at VOL2
20 + 0.1Cb 250
ns
tSP
pulse width of spikes suppressed by lter
0
100
ns
CI
input capacitance
VI =VSS
10
pF
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