參數(shù)資料
型號(hào): 93LC56C
廠商: Microchip Technology Inc.
元件分類: EEPROM
英文描述: 2K Microwire Compatible Serial EEPROM
中文描述: 2K微絲兼容串行EEPROM
文件頁數(shù): 11/28頁
文件大小: 357K
代理商: 93LC56C
2007 Microchip Technology Inc.
DS21794E-page 11
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
2.9
Write All (WRAL)
The Write All (
WRAL
) instruction will write the entire
memory array with the data specified in the command.
For 93AA56A/B/C and 93LC56A/B/C devices, after the
last data bit is clocked into DI, the falling edge of CS
initiates the self-timed auto-erase and programming
cycle. For 93C56A/B/C devices, the self-timed auto-
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit. Clocking of the CLK
pin is not necessary after the device has entered the
WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL
instruction does not require an
ERAL
instruction,
but the chip must be in the EWEN status.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
).
V
CC
must be
4.5V for proper operation of
WRAL
.
FIGURE 2-10:
WRAL TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-11:
WRAL TIMING FOR 93C DEVICES
Note:
After the Write All cycle is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
CS
CLK
DI
DO
High-Z
1
0
0
0
1
x
x
Dx
D0
High-Z
Busy
Ready
T
WL
V
CC
must be
4.5V for proper operation of WRAL.
T
CSL
T
SV
T
CZ
CS
CLK
DI
DO
High-Z
1
0
0
0
1
x
x
Dx
D0
High-Z
Busy
Ready
T
WL
T
CSL
T
SV
T
CZ
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