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參數(shù)資料
| 型號： | A1361LKTTN-T |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, 4.65-4.80V, RECTANGULAR, THROUGH HOLE MOUNT |
| 封裝： | LEAD FREE, PLASTIC, SIP-4 |
| 文件頁數(shù)： | 16/25頁 |
| 文件大?。?/td> | 615K |
| 代理商： | A1361LKTTN-T |
A1360, A1361,
and A1362
The flux density measured by the A136x SIP is related to the
size of the gap cut into the core. The larger the gap in the core,
the smaller the flux density per ampere of applied current (see
figure 8).
Figure 9 depicts the magnetic flux density through the center of
the SIP as a function of SIP to core alignment. Note that a core
with a larger cross-sectional area would reduce the attenuation
in flux density that results from any SIP misalignment. The flat
portion of the curve in figure 9 would span a larger distance in
millimeters if the cross-sectional area of the core were increased.
Wire
+B
mm
–2
2
0
Ring concentrator
Magnetic flux in gap
Measurement plane
(midplane of gap)
Figure 9. Side view of example current-conducting wire and split ring concentrator (left), and
magnetic prole (right) through the midplane of the gap in the split ring concentrator. The ux
denisty through the center of the gap varies between the inside and the outside of the gap.
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
–2.0
Radial Displacement from Concentrator Centerline (mm)
Interior side of
Concentrator
Exterior side of
Concentrator
Magnetic
Flux
Intensity
,B
(G)
–1.0
1.0
2.0
0
Figure 8. The flux density per ampere measured by the A136x Hall sen-
sor IC is related to the core gap, as shown. This figure assumes that the
current sensing application is constructed using the example setup.
Flux Density per Ampere vs. Gap for a Feedthrough Sensor
0
2
4
6
8
10
12
14
0.5
1
1.5
2
2.5
3
3.5
Gap (mm)
G
/A
a
tthe
G
a
p
C
e
nte
r
Low-Noise Programmable Linear Hall Effect Sensor ICs with
Adjustable Bandwidth (50 kHz Maximum) and Analog Output
23
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A1362LKTTN-T | 功能描述:IC HALL EFFECT SENSOR LN 4-SIP RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 磁性 - 霍爾效應(yīng)，數(shù)字式開關(guān)，線性，羅盤 (IC) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 傳感范圍:20mT ~ 80mT 類型:旋轉(zhuǎn) 電源電壓:4.5 V ~ 5.5 V 電流 - 電源:15mA 電流 - 輸出（最大）:- 輸出類型:數(shù)字式，PWM，8.5 位串行 特點(diǎn):可編程 工作溫度:-40°C ~ 150°C 封裝/外殼:20-SSOP（0.209"，5.30mm 寬） 供應(yīng)商設(shè)備封裝:20-SSOP 包裝:Digi-Reel® 其它名稱:AS5132-HSST-500DKR |
| A1363LKTTN-10-T | 功能描述:IC HALL SENSOR 6.4-14MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:線性 技術(shù):霍爾效應(yīng) 軸:單路 感應(yīng)范圍:- 電壓 - 電源:4.5 V ~ 5.5 V 電流 - 電源（最大值）:15mA 電流 - 輸出（最大值）:10mA 輸出類型:模擬電壓 分辨率:- 帶寬:120kHz 工作溫度:-40°C ~ 150°C（TA） 特性:可編程，溫度補(bǔ)償 封裝/外殼:4-SIP 模塊 供應(yīng)商器件封裝:4-SIP 標(biāo)準(zhǔn)包裝:1 |
| A1363LKTTN-1-T | 功能描述:IC HALL SENSOR 0.6-1.3MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:線性 技術(shù):霍爾效應(yīng) 軸:單路 感應(yīng)范圍:- 電壓 - 電源:4.5 V ~ 5.5 V 電流 - 電源（最大值）:15mA 電流 - 輸出（最大值）:10mA 輸出類型:模擬電壓 分辨率:- 帶寬:120kHz 工作溫度:-40°C ~ 150°C（TA） 特性:可編程，溫度補(bǔ)償 封裝/外殼:4-SIP 模塊 供應(yīng)商器件封裝:模塊 標(biāo)準(zhǔn)包裝:1 |
| A1363LKTTN-2-T | 功能描述:IC HALL SENSOR 1.3-2.9MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:線性 技術(shù):霍爾效應(yīng) 軸:單路 感應(yīng)范圍:- 電壓 - 電源:4.5 V ~ 5.5 V 電流 - 電源（最大值）:15mA 電流 - 輸出（最大值）:10mA 輸出類型:模擬電壓 分辨率:- 帶寬:120kHz 工作溫度:-40°C ~ 150°C（TA） 特性:可編程，溫度補(bǔ)償 封裝/外殼:4-SIP 模塊 供應(yīng)商器件封裝:4-SIP 標(biāo)準(zhǔn)包裝:1 |
| A1363LKTTN-5-T | 功能描述:IC HALL SENSOR 2.9-6.4MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:線性 技術(shù):霍爾效應(yīng) 軸:單路 感應(yīng)范圍:- 電壓 - 電源:4.5 V ~ 5.5 V 電流 - 電源（最大值）:15mA 電流 - 輸出（最大值）:10mA 輸出類型:模擬電壓 分辨率:- 帶寬:120kHz 工作溫度:-40°C ~ 150°C（TA） 特性:可編程，溫度補(bǔ)償 封裝/外殼:4-SIP 模塊 供應(yīng)商器件封裝:4-SIP 標(biāo)準(zhǔn)包裝:1 |
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