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參數(shù)資料
| 型號(hào)： | A28F400BX-B |
| 廠商： | Intel Corp. |
| 英文描述： | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 4兆位（為512k × 8）開機(jī)區(qū)塊快閃記憶體（4兆位（為512k × 8）引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 16/34頁 |
| 文件大?。?/td> | 411K |
| 代理商： | A28F400BX-B |
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A28F400BX-T/B
Similar to erasure, the status register indicates
whether programming is complete. While the pro-
gram sequence is executing, bit 7 of the status regis-
ter is a ‘‘0’’. The status register can be polled by
toggling either CE
Y
or OE
Y
to determine when the
program sequence is complete. Only the Read
Status Register command is valid while program-
ming is active.
When programming is complete, the status bits,
which indicate whether the program operation was
successful, should be checked. If the programming
operation was unsuccessful, Bit 4 of the status regis-
ter is set to a ‘‘1’’ to indicate a Program Failure. If
Bit 3 is set then V
PP
was not within acceptable limits,
and the WSM will not execute the programming se-
quence.
The status register should be cleared before at-
tempting the next operation. Any CUI instruction can
follow after programming is completed; however, it
must be recognized that reads from the memory,
status register, or Intelligent Identifier cannot be ac-
complished until the CUI is given the appropriate
command. A Read Array command must first be giv-
en before memory contents can be read.
Figure 6 shows a system software flowchart for de-
vice byte programming operation. Figure 7 shows a
similar flowchart for device word programming oper-
ation (A28F400BX-only).
3.3.5 ERASE MODE
Erasure of a single block is initiated by writing the
Erase Setup and Erase Confirm commands to the
CUI, along with the addresses A
[
12:17
]
, identifying
the block to be erased. These addresses are latched
internally when the Erase Confirm command is is-
sued. Block erasure results in all bits within the block
being set to ‘‘1’’.
The WSM will execute a sequence of internally
timed events to:
1. Program all bits within the block
2. Verify that all bits within the block are sufficiently
programmed
3. Erase all bits within the block and
4. Verify that all bits within the block are sufficiently
erased
While the erase sequence is executing, Bit 7 of the
status register is a ‘‘0’’.
When the status register indicates that erasure is
complete, the status bits, which indicate whether the
erase operation was successful, should be checked.
If the erasure operation was unsuccessful, Bit 5 of
the status register is set to a ‘‘1’’ to indicate an
Erase Failure. If V
PP
was not within acceptable limits
after the Erase Confirm command is issued, the
WSM will not execute an erase sequence; instead,
Bits of the status register is set to a ‘‘1’’ to indicate
an Erase Failure, and Bit 3 is set to a ‘‘1’’ to identify
that V
PP
supply voltage was not within acceptable
limits.
The status register should be cleared before at-
tempting the next operation. Any CUI instruction can
follow after erasure is completed; however, it must
be recognized that reads from the memory array,
status register, or Intelligent Identifier can not be ac-
complished until the CUI is given the appropriate
command. A Read Array command must first be giv-
en before memory contents can be read.
Figure 8 shows a system software flowchart for
Block Erase operation.
3.3.5.1 Suspending and Resuming Erase
Since an erase operation typically requires 1.5 to 3
seconds to complete, an Erase Suspend command
is provided. This allows erase-sequence interruption
in order to read data from another block of the mem-
ory. Once the erase sequence is started, writing the
Erase Suspend command to the CUI requests that
the Write State Machine (WSM) pause the erase se-
quence at a predetermined point in the erase algo-
rithm. The status register must be read to determine
when the erase operation has been suspended.
At this point, a Read Array command can be written
to the CUI in order to read data from blocks other
than that which is being suspended. The only other
valid command at this time is the Erase Resume
command or Read Status Register operation.
Figure 9 shows a system software flowchart detail-
ing the operation.
16
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A28F400BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F400BX-T/B |
| A28F5501S | 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
| A28F5502 | 制造商:General Electric Company 功能描述:Film Capacitor |
| A28F5502S | 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF 1KV 10% CASE 制造商:GE 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE; Capacitance:0.5F; Capacitance Tolerance: 10%; Capacitor Dielectric Type:Polypropylene (PP); Voltage Rating:1000V; Life Time @ Temperature:40000 hours @ 70C; Capacitor Case Style:CAN 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
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