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參數(shù)資料
| 型號(hào)： | ACTS10D |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Triple Three-Input NAND Gate |
| 中文描述： | 輻射加固三三輸入與非門 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 112K |
| 代理商： | ACTS10D |
3
Specifications ACTS10MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
2
16
ns
10, 11
2
20
ns
TPLH
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
2
13
ns
10, 11
2
16
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMP
+25
o
C
+125
o
C
+25
o
C
+125
o
C
LIMITS
UNITS
MIN
TYP
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
-
27
-
pF
-
28
-
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
-
-
10
pF
-
-
10
pF
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMP
+25
o
C
+25
o
C
RAD LIMITS
UNITS
μ
A
mA
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
-
100
Delta ICC
DICC
VCC = 5.5V, VIN = VCC or GND,
1 Input = 3.4V
-
1.6
Output Current (Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
+25
o
C
-8
-
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V, VOUT = 0.4V,
VIL = 0
+25
o
C
8
-
mA
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOH = -50
μ
A
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = -50
μ
A
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOH = 50
μ
A
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = 50
μ
A
VCC = 5.5V, VIN = VCC or GND
+25
o
C
VCC -0.1
-
V
+25
o
C
VCC -0.1
-
V
Output Voltage Low
VOL
+25
o
C
-
0.1
V
+25
o
C
-
0.1
V
Input Leakage Current
IIN
+25
o
C
+25
o
C
-
±
1
-
μ
A
V
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 2)
-
Propagation Delay
TPHL
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
+25
o
C
2
20
ns
TPLH
VCC = 4.5V, VIH = 3.0V, VIL = 0V
2
16
ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
518823
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相關(guān)代理商/技術(shù)參數(shù) |
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| ACTS10DMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple Three-Input NAND Gate |
| ACTS10HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple Three-Input NAND Gate |
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| ACTS10KMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple Three-Input NAND Gate |
| ACTS10MS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple Three-Input NAND Gate |
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