TA = 25°C, +VCC
參數(shù)資料
型號: AD660BRZ-REEL
廠商: Analog Devices Inc
文件頁數(shù): 14/20頁
文件大?。?/td> 0K
描述: IC DAC 16BIT MONO W/VREF 24-SOIC
產(chǎn)品培訓(xùn)模塊: Data Converter Fundamentals
DAC Architectures
標(biāo)準(zhǔn)包裝: 1,000
系列: DACPORT®
設(shè)置時(shí)間: 6µs
位數(shù): 16
數(shù)據(jù)接口: 串行
轉(zhuǎn)換器數(shù)目: 1
電壓電源: 模擬和數(shù)字,雙 ±
功率耗散(最大): 625mW
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 24-SOIC W
包裝: 帶卷 (TR)
輸出數(shù)目和類型: 1 電壓,單極;1 電壓,雙極
采樣率(每秒): 167k
AD660
Rev. B | Page 3 of 20
SPECIFICATIONS
TA = 25°C, +VCC = 15 V, VEE = 15 V, +VLL = 5 V unless otherwise noted.
Table 1.
Parameter
AD660AN/AR/SQ
AD660BN/BR
Unit
Min
Typ
Max
Min
Typ
Max
RESOLUTION
16
Bits
DIGITAL INPUTS (TMIN to TMAX)
VIH (Logic 1)
2.0
5.5
2.0
5.5
V
VIL (Logic 0)
0
0.8
0
0.8
V
IIH (VIH = 5.5 V)
10
+10
10
+10
μA
IIL (VIL = 0 V)
10
+10
10
+10
μA
TRANSFER FUNCTION CHARACTERISTICS1
Integral Nonlinearity
Bipolar Operation
2
+2
1
+1
LSB
TMIN to TMAX
4
+4
2
+2
LSB
Unipolar Operation
2
+2
1
+1.5
LSB
TMIN to TMAX
4
+4
2
+2
LSB
Differential Nonlinearity
2
+2
1
+1
LSB
TMIN to TMAX
4
+4
2
+2
LSB
Monotonicity Over Temperature
14
15
Bits
Gain Error2, 3
0.1
+0.1
0.1
+0.1
% of FSR
Gain Drift (TMIN to TMAX)
25
15
ppm/°C
DAC Gain Error4
0.05
+0.05
0.05
+0.05
% of FSR
DAC Gain Drift4
10
ppm/°C
Unipolar Offset
2.5
+2.5
2.5
+2.5
mV
Unipolar Offset Drift (TMIN to TMAX)
3
ppm/°C
Bipolar Zero Error
7.5
+7.5
7.5
+7.5
mV
Bipolar Zero Error Drift (TMIN to TMAX)
5
ppm/°C
REFERENCE INPUT
Input Resistance
7
10
13
7
10
13
Bipolar Offset Input Resistance
7
10
13
7
10
13
REFERENCE OUTPUT
Voltage
9.99
10.00
10.01
9.99
10.00
10.01
V
Drift
25
15
ppm/°C
External Current5
2
4
2
4
mA
Capacitive Load
1000
pF
Short-Circuit Current
25
mA
OUTPUT CHARACTERISTICS
Output Voltage Range
Unipolar Configuration
0
+10
0
+10
V
Bipolar Configuration
10
+10
10
+10
V
Output Current
5
mA
Capacitive Load
1000
pF
Short-Circuit Current
25
mA
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