AD7849
Rev. C | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameter
Rating
VDD to DGND
0.4 V to +17 V
0.4 V, VDD + 0.4 V or
+7 V (whichever is
lower)
VSS to DGND
0.4 V to 17 V
VREF+ to DGND
VDD + 0.4 V, VSS 0.4 V
VREF to DGND
VDD + 0.4 V, VSS 0.4 V
VDD + 0.4 V, VSS 0.4 V
or ±10 V (whichever is
lower)
ROFS to DGND
VDD + 0.4 V, VSS 0.4 V
Digital Input Voltage to DGND
0.4 V to VCC + 0.4 V
Input Current to any Pin Except Supplies
3±10 mA
Operating Temperature Range
40°C to +85°C
Storage Temperature Range
65°C to +150°C
Junction Temperature
150°C
20-Lead PDIP
Power Dissipation
875 mW
θJA Thermal Impedance
102°C/W
Lead Temperature (Soldering, 10 sec)
260°C
20-Lead SOIC
Power Dissipation
875 mW
θJA Thermal Impedance
74°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
1 VCC must not exceed VDD by more than 0.4 V. If it is possible for this to
happen during power-up or power-down (for example, if VCC is greater than
0.4 V while VDD is still 0 V), the following diode protection scheme ensures
protection.
SD103C
1N5711
1N5712
1N4148
VDD
VCC
VDD
VCC
AD7849
0100
8-0
02
2 VOUT can be shorted to DGND, + 10 V, 10 V, provided that the power
dissipation of the package is not exceeded.
3 Transient currents of up to 100 mA do not cause SCR latch-up.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION