參數(shù)資料
型號: AD8220BRMZ-R7
廠商: Analog Devices Inc
文件頁數(shù): 24/28頁
文件大小: 0K
描述: IC AMP INST JFET R-R 15MA 8MSOP
產(chǎn)品培訓(xùn)模塊: Power Line Monitoring
設(shè)計資源: Fully Isolated Input Module Based on AD7793, ADuM5401, and a High Performance In-Amp (CN0067)
標(biāo)準(zhǔn)包裝: 1,000
放大器類型: 儀表
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 2 V/µs
-3db帶寬: 1.5MHz
電流 - 輸入偏壓: 10pA
電壓 - 輸入偏移: 125µV
電流 - 電源: 750µA
電流 - 輸出 / 通道: 15mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 36 V,±2.25 V ~ 18 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-TSSOP,8-MSOP(0.118",3.00mm 寬)
供應(yīng)商設(shè)備封裝: 8-MSOP
包裝: 帶卷 (TR)
AD8220
Rev. B | Page 5 of 28
A Grade
B Grade
W Grade
Parameter
Test Conditions
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
POWER SUPPLY
V
Operating Range
±2.254
±18
±2.254
±18
±2.254
±18
μA
Quiescent Current
TA
750
μA
Over Temperature
TOPR
850
1000
μA
TEMPERATURE RANGE
For Specified
Performance
TOPR
40
+85
40
+85
40
+125
°C
1 When the output sinks more than 4 mA, use a 47 pF capacitor in parallel with the load to prevent ringing. Otherwise, use a larger load, such as 10 kΩ.
2 Differential and common-mode input impedance can be calculated from the pin impedance: ZDIFF = 2(ZPIN); ZCM = ZPIN/2.
3 The AD8220 can operate up to a diode drop below the negative supply but the bias current increases sharply. The input voltage range reflects the maximum
allowable voltage where the input bias current is within the specification.
4 At this supply voltage, ensure that the input common-mode voltage is within the input voltage range specification.
VS + = 5 V, VS = 0 V, VREF = 2.5 V, TA = 25°C, TOPR = 40°C to +85°C for A and B grades. TOPR = 40°C to +125°C for W grade, G = 1,
RL = 2 kΩ1, unless otherwise noted.
Table 2.
A Grade
B Grade
W Grade
Parameter
Test Conditions
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
COMMON-MODE REJECTION
RATIO (CMRR)
TA for A, B grades,
TOPR for W grade
CMRR DC to 60 Hz with
1 kΩ Source Imbalance
VCM = 0 to 2.5 V
G = 1
78
86
77
dB
G = 10
94
100
92
dB
G = 100
94
100
92
dB
G = 1000
94
100
92
dB
CMRR at 5 kHz
VCM = 0 to 2.5 V
G = 1
74
80
72
dB
G = 10
84
90
80
dB
G = 100
84
90
80
dB
G = 1000
84
90
80
dB
NOISE
RTI noise = √(eni2 +
(eno/G)2), TA
Voltage Noise, 1 kHz
VS = ±2.5 V
Input Voltage Noise, eni
VIN+, VIN = 0 V, VREF =
0 V
14
17
14
nV/√Hz
Output Voltage Noise, eno
VIN+, VIN = 0 V, VREF =
0 V
90
100
90
nV/√Hz
RTI, 0.1 Hz to 10 Hz
G = 1
5
μV p-p
G = 1000
0.8
μV p-p
Current Noise
f = 1 kHz
1
fA/√Hz
VOLTAGE OFFSET
VOS = VOSI + VOSO/G
Input Offset, VOSI
TA
300
+300
200
+200
300
+300
μV
Average TC
TOPR
10
+10
5
+5
10
μV/°C
Output Offset, VOSO
TA
800
+800
600
+600
800
+800
μV
Average TC
TOPR
10
+10
5
+5
10
+10
μV/°C
Offset RTI vs. Supply (PSR)
TA for A, B grades,
TOPR for W grade
G = 1
86
80
dB
G = 10
96
100
92
dB
G = 100
96
100
92
dB
G = 1000
96
100
92
dB
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