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參數(shù)資料
型號(hào): AD824ARZ-14-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 10/16頁
文件大?。?/td> 0K
描述: IC OPAMP JFET R-R 2MHZ LP 14SOIC
標(biāo)準(zhǔn)包裝: 750
放大器類型: J-FET
電路數(shù): 4
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 2 V/µs
增益帶寬積: 2MHz
-3db帶寬: 2MHz
電流 - 輸入偏壓: 4pA
電壓 - 輸入偏移: 500µV
電流 - 電源: 560µA
電流 - 輸出 / 通道: 12mA
電壓 - 電源,單路/雙路(±): 3 V ~ 30 V,±1.5 V ~ 15 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 14-SOIC
包裝: 帶卷 (TR)
REV. C
–3–
AD824
ELECTRICAL SPECIFICATIONS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
AD824A
VOS
0.5
2.5
mV
TMIN to TMAX
0.6
4.0
mV
Input Bias Current
IB
VCM = 0 V
4
35
pA
TMIN to TMAX
500
4000
pA
IB
VCM = –10 V
25
pA
Input Offset Current
IOS
320
pA
TMIN to TMAX
500
pA
Input Voltage Range
–15
13
V
Common-Mode Rejection Ratio
CMRR
VCM = –15 V to 13 V
70
80
dB
TMIN to TMAX
66
dB
Input Impedance
10
13 3.3
W pF
Large Signal Voltage Gain
AVO
Vo = –10 V to +10 V;
RL = 2 k
W
12
50
V/mV
RL = 10 k
W
50
200
V/mV
RL = 100 k
W
300
2000
V/mV
TMIN to TMAX, RL = 100 k
W
200
1000
V/mV
Offset Voltage Drift
DVOS/DT2
mV/∞C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
ISOURCE = 20
mA
14.975
14.988
V
TMIN to TMAX
14.970
14.985
V
ISOURCE = 2.5 mA
14.80
14.85
V
TMIN to TMAX
14.75
14.82
V
Output Voltage Low
VOL
ISINK = 20
mA
–14.985
–14.975
V
TMIN to TMAX
–14.98
–14.97
V
ISINK = 2.5 mA
–14.88
–14.85
V
TMIN to TMAX
–14.86
–14.8
V
Short Circuit Limit
ISC
Sink/Source, TMIN to TMAX
±8
±20
mA
Open-Loop Impedance
ZOUT
f = 1 MHz, AV = 1
100
W
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 15 V
70
80
dB
TMIN to TMAX
68
dB
Supply Current/Amplifier
ISY
VO = 0 V
560
625
mA
TMIN to TMAX
675
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 k
W, AV = 1
2
V/
ms
Full-Power Bandwidth
BWP
1% Distortion, VO = 20 V p-p
33
kHz
Settling Time
tS
VOUT = 0 V to 10 V, to 0.01%
6
ms
Gain Bandwidth Product
GBP
2
MHz
Phase Margin
fo50
Degrees
Channel Separation
CS
f = 1 kHz, RL =2 k
W
–123
dB
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
2
mV p-p
Voltage Noise Density
en
f = 1 kHz
16
nV/
÷Hz
Current Noise Density
in
f = 1 kHz
1.1
fA/
÷Hz
Total Harmonic Distortion
THD
f =10 kHz, VO = 3 V rms,
RL = 10 k
W
0.005
%
(@ VS =
15.0 V, VOUT = 0 V, TA = 25 C unless otherwise noted)
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