參數(shù)資料
型號： ADC12010CIVYX
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： ADC
英文描述： 12-Bit, 10 MSPS, 160 mW A/D Converter with Internal Sample-and-Hold
中文描述： 1-CH 12-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQFP32
封裝： LQFP-32
文件頁數(shù)： 5/22頁
文件大小： 606K
代理商： ADC12010CIVYX
Absolute Maximum Ratings
(Notes 1,
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
A
, V
D
V
DR
|V
A
–V
D
|
Voltage on Any Input or Output Pin
6.5V
≤
V
D
+0.3V
≤
100 mV
0.3V to (V
A
or V
D
+0.3V)
±
25 mA
±
50 mA
Input Current at Any Pin (Note 3)
Package Input Current (Note 3)
Package Dissipation at T
A
= 25C
ESD Susceptibility
Human Body Model (Note 5)
Machine Model (Note 5)
Soldering Temperature,
Infrared, 10 sec. (Note 6)
Storage Temperature
See (Note 4)
2500V
250V
235C
65C to +150C
Operating Ratings
(Notes 1, 2)
Operating Temperature
Supply Voltage (V
A
, V
D
)
Output Driver Supply (V
DR
)
V
REF
Input
CLK, PD, OE
V
IN
Input
V
CM
|AGND–DGND|
40C
≤
T
A
≤
+85C
+4.75V to +5.25V
+2.35V to V
D
1.0V to 2.4V
0.05V to (V
D
+ 0.05V)
0V to (V
A
0.5V)
1.0V to 4.0V
≤
100mV
Converter Electrical Characteristics
Unless otherwise specified, the following specifications apply for AGND = DGND = DR GND = 0V, V
= V
D
= +5V, V
DR
=
+3.0V, PD = 0V, V
REF
= +2.0V, f
CLK
= 10 MHz, t
r
= t
f
= 3 ns, C
L
= 25 pF/pin.
Boldface limits apply for T
A
= T
J
= T
MIN
to
T
MAX
:
all other limits T
A
= T
J
= 25C (Notes 7, 8, 9)
Symbol
Parameter
Conditions
Typical
(Note 10)
Limits
(Note 10)
Units
(Limits)
STATIC CONVERTER CHARACTERISTICS
Resolution with No Missing Codes
INL
Integral Non Linearity (Note 11)
DNL
Differential Non Linearity
GE
Gain Error
Offset Error (V
IN
= V
IN
)
Under Range Output Code
Over Range Output Code
DYNAMIC CONVERTER CHARACTERISTICS
FPBW
Full Power Bandwidth
12
±
1.5
±
0.9
2.9
1.75
0
4095
Bits (min)
LSB (max)
LSB (max)
%FS (max)
%FS (max)
±
0.5
±
0.3
±
0.2
0.1
0
4095
0 dBFS Input, Output at 3 dB
f
IN
= 1 MHz, V
IN
= 0.5 dBFS
f
IN
= 4.4 MHz, V
IN
= 0.5 dBFS
f
IN
= 10.1 MHz, V
IN
= 0.5 dBFS
f
IN
= 1 MHz, V
IN
= 0.5 dBFS
f
IN
= 4.4 MHz, V
IN
= 0.5 dBFS
f
IN
= 10.1 MHz, V
IN
= 0.5 dBFS
f
IN
= 1 MHz, V
IN
= 0.5 dBFS
f
IN
= 4.4 MHz, V
IN
= 0.5 dBFS
f
IN
= 10.1 MHz, V
IN
= 0.5 dBFS
f
IN
= 1 MHz, V
IN
= 0.5 dBFS
f
IN
= 4.4 MHz, V
IN
= 0.5 dBFS
f
IN
= 10.1 MHz, V
IN
= 0.5 dBFS
f
IN
= 1 MHz, V
IN
= 0.5 dBFS
f
IN
= 4.4 MHz, V
IN
= 0.5 dBFS
f
IN
= 10.1 MHz, V
IN
= 0.5 dBFS
100
70
70
70
70
70
69
11.4
11.4
11.3
88
86
79
92
89
83
MHz
dB
dB
dB (min)
dB
dB
dB (min)
dB
dB
dB (min)
dB
dB
dB (min)
dB
dB
dB (min)
SNR
Signal-to-Noise Ratio
66
SINAD
Signal-to-Noise and Distortion
66
ENOB
Effective Number of Bits
10.7
THD
Total Harmonic Distortion
74
SFDR
Spurious Free Dynamic Range
69
A
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