參數(shù)資料
型號: ADN2850BCPZ250
廠商: Analog Devices Inc
文件頁數(shù): 17/28頁
文件大?。?/td> 0K
描述: IC DGTL RHEO DL 1024POS 16LFCSP
產(chǎn)品變化通告: Metal Edit Change 03/Feb/2012
標準包裝: 1
接片: 1024
電阻(歐姆): 250k
電路數(shù): 2
溫度系數(shù): 標準值 35 ppm/°C
存儲器類型: 非易失
接口: 4 線 SPI(芯片選擇)
電源電壓: 3 V ~ 5.5 V,±2.25 V ~ 2.75 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-VQFN 裸露焊盤,CSP
供應(yīng)商設(shè)備封裝: 16-LFCSP
包裝: 托盤
ADN2850
Data Sheet
Rev. E | Page 24 of 28
RESISTANCE TOLERANCE, DRIFT, AND
TEMPERATURE COEFFICIENT MISMATCH
CONSIDERATIONS
In operation, such as gain control, the tolerance mismatch
between the digital resistor and the discrete resistor can cause
repeatability issues among various systems (see Figure 42).
Because of the inherent matching of the silicon process, it is
practical to apply the dual-channel device in this type of
application. As such, R1 can be replaced by one of the channels
of the digital resistor and programmed to a specific value. R2 can
be used for the adjustable gain. Although it adds cost, this approach
minimizes the tolerance and temperature coefficient mismatch
between R1 and R2. This approach also tracks the resistance
drift over time. As a result, these less than ideal parameters
become less sensitive to system variations.
AD8601
+
Vi
U1
VO
C1
B
W
R2
R1*
* REPLACED WITH ANOTHER
CHANNEL OF RDAC
0
2
6
0
-0
6
1
Figure 42. Linear Gain Control with Tracking Resistance Tolerance,
Drift, and Temperature Coefficient
RDAC CIRCUIT SIMULATION MODEL
The internal parasitic capacitances and the external capacitive
loads dominate the ac characteristics of the RDACs. A parasitic
simulation model is shown in Figure 43.
RDAC
25k
W
80pF
CB
11pF
B
02660-
063
Figure 43. RDAC Circuit Simulation Model (RDAC = 25 k)
The following code provides a macro model net list for the
25 k RDAC:
.PARAM D = 1024, RDAC = 25E3
*
.SUBCKT DPOT ( W, B)
*
CW
W
0
80E-12
RWB W
B
{D/1024 * RDAC + 50}
CB
B
0
11E-12
*
.ENDS DPOT
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