參數(shù)資料
型號: ADSP-TS201SABPZ060
廠商: Analog Devices Inc
文件頁數(shù): 16/48頁
文件大?。?/td> 0K
描述: IC PROCESSOR 600MHZ 576BGA
標(biāo)準(zhǔn)包裝: 1
系列: TigerSHARC®
類型: 定點/浮點
接口: 主機接口,連接端口,多處理器
時鐘速率: 600MHz
非易失內(nèi)存: 外部
芯片上RAM: 3MB
電壓 - 輸入/輸出: 2.50V
電壓 - 核心: 1.20V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 576-BBGA 裸露焊盤
供應(yīng)商設(shè)備封裝: 576-BGA-ED(25x25)
包裝: 托盤
配用: ADZS-TS201S-EZLITE-ND - KIT LITE EVAL FOR ADSP-TS201S
ADSP-TS201S
Rev. C
|
Page 23 of 48
|
December 2006
PACKAGE INFORMATION
The information presented in Figure 8 provide details about the
package branding for the ADSP-TS201S processors. For a com-
plete listing of product availability, see Ordering Guide on
ABSOLUTE MAXIMUM RATINGS
Stresses greater than those listed below may cause permanent
damage to the device. These are stress ratings only. Functional
operation of the device at these or any other conditions greater
than those indicated in the operational sections of this specifica-
tion is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ESD SENSITIVITY
Figure 8. Typical Package Brand
Table 19. Package Brand Information
Brand Key
Field Description
t
Temperature Range
pp
Package Type
Z
Lead Free Option (optional)
ccc
See Ordering Guide
LLLLLLLLL-L
Silicon Lot Number
R.R
Silicon Revision
yyww
Date Code
vvvvvv
Assembly Lot Code
LLLLLLLLL-L 2.0
tppZ-ccc
T
ADSP-TS20xS
a
yyww country_of_origin
vvvvv
Table 20. Absolute Maximum Ratings
Parameter
Rating
Internal (Core) Supply Voltage (VDD)–0.3 V to +1.4 V
Analog (PLL) Supply Voltage (VDD_A)–0.3 V to +1.4 V
External (I/O) Supply Voltage (VDD_IO)–0.3 V to +3.5 V
External (DRAM) Supply Voltage (VDD_DRAM)–0.3 V to +2.1 V
Input Voltage
1
1 Applies to 10% transient duty cycle. For other duty cycles see Table 18.
–0.63 V to +3.93 V
Output Voltage Swing
–0.5 V to VDD_IO+0.5 V
Storage Temperature Range
–65°C to +150°C
ESD (electrostatic discharge) sensitive device.
Charged devices and circuit boards can discharge
without detection. Although this product features
patented or proprietary circuitry, damage may occur
on devices subjected to high energy ESD. Therefore,
proper ESD precautions should be take to avoid
performance degradation or loss of functionality.
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