2-84 Revision 13 Timing Characteristics 1.5 V DC Core Voltage 1.2 V DC Core Voltage <" />
參數(shù)資料
型號: AGLE3000V2-FGG896I
廠商: Microsemi SoC
文件頁數(shù): 165/166頁
文件大小: 0K
描述: IC FPGA 1KB FLASH 3M 896-FBGA
標(biāo)準(zhǔn)包裝: 27
系列: IGLOOe
邏輯元件/單元數(shù): 75264
RAM 位總計(jì): 516096
輸入/輸出數(shù): 620
門數(shù): 3000000
電源電壓: 1.14 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: -40°C ~ 85°C
封裝/外殼: 896-BGA
供應(yīng)商設(shè)備封裝: 896-FBGA(31x31)
IGLOOe DC and Switching Characteristics
2-84
Revision 13
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-135 Combinatorial Cell Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Combinatorial Cell
Equation
Parameter
Std.
Units
INV
Y = !A
tPD
0.80
ns
AND2
Y = A B
tPD
0.84
ns
NAND2
Y = !(A B)
tPD
0.90
ns
OR2
Y = A + B
tPD
1.19
ns
NOR2
Y = !(A + B)
tPD
1.10
ns
XOR2
Y = A
Bt
PD
1.37
ns
MAJ3
Y = MAJ(A, B, C)
tPD
1.33
ns
XOR3
Y = A
B Ct
PD
1.79
ns
MUX2
Y = A !S + B S
tPD
1.48
ns
AND3
Y = A B C
tPD
1.21
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-136 Combinatorial Cell Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Combinatorial Cell
Equation
Parameter
Std.
Units
INV
Y = !A
tPD
1.35
ns
AND2
Y = A B
tPD
1.42
ns
NAND2
Y = !(A B)
tPD
1.58
ns
OR2
Y = A + B
tPD
2.10
ns
NOR2
Y = !(A + B)
tPD
1.94
ns
XOR2
Y = A
Bt
PD
2.33
ns
MAJ3
Y = MAJ(A, B, C)
tPD
2.34
ns
XOR3
Y = A
B Ct
PD
3.05
ns
MUX2
Y = A !S + B S
tPD
2.64
ns
AND3
Y = A B C
tPD
2.10
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
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