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參數(shù)資料
| 型號(hào)： | AGR19060EF |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 210K |
| 代理商： | AGR19060EF |
Agere Systems Inc.
9
Preliminary Data Sheet
AGR19060E
April 2004
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 26 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
Test Conditions:
VDD = 28 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
0
5
10
15
20
25
30
35
40
45
50
55
0
102030
40
50
60
POUT (W) Avg.Z
G
PS
(
d
B
),
η
(%),
EVM
(%)
Z
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
SPEC
T
R
AL
R
E
GR
OW
T
H
(dBc
)
EVM
GPS
600 kHz
400 kHz
η
0
5
10
15
20
25
30
35
40
45
50
55
0
1020
3040
50
60
POUT (W) Avg.Z
G
PS
(
d
B
),
η
(%),
EVM
(%)
Z
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
SPEC
T
R
AL
T
R
EGR
O
W
T
H
(dBc
)Z
EVM
GPS
600 kHz
400 kHz
η
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| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
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| AGR19125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
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