- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42888 > AGR19060EF (LSI CORP) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | AGR19060EF |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大小： | 210K |
| 代理商： | AGR19060EF |
Agere Systems Inc.
7
Preliminary Data Sheet
AGR19060E
April 2004
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, IDQ = 700 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% proba-
bility (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. POUT
Test Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT
0
5
10
15
20
25
30
35
40
45
50
55
60
1
10
100
POUT (W)Z
G
PS
(
d
B
),
η
(%)
Z
-70
-60
-50
-40
-30
-20
-10
IM
3
(dBc
),
AC
PR
(dBc
)Z
ACP
GPS
η
IM3
12
13
14
15
16
17
1
10
100
POUT (W)
G
PS
(dB)
Z
IDQ = 500 mA
IDQ = 700 mA
IDQ = 800 mA
IDQ = 300 mA
IDQ = 400 mA
IDQ = 600 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGR19060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19090EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19090EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19090EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。