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參數(shù)資料
| 型號： | AGR19060EF |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 210K |
| 代理商： | AGR19060EF |
Agere Systems Inc.
3
Preliminary Data Sheet
AGR19060E
April 2004
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. RF Characteristics
Parameter
Symbol
Min
Typ
Max Unit
Dynamic Characteristics
Transfer Capacitance
(VDS =28 V, VGS =0, f = 1 MHz)
(Part is internally matched both on input and output.)
CRSS
—
1.3
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
GPS
14.5
15.5
—
dB
Drain Efficiency
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
—
23.5
—
%
Third-order Intermodulation Distortion
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
IM3 measured in a 1.2288 MHz integration BW centered at f1 – 2.5 MHz
and f2 + 2.5 MHz, referenced to the carrier channel power)
IM3
—–36
—
dBc
Adjacent Channel Power Ratio
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 1.2288 MHz integration BW centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
ACPR
—–50.5
—
dBc
Input Return Loss
(VDD =28Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ =700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—–12
—
dB
Output Power at 1 dB Gain Compression
(VDD =28V, POUT = 60 W CW, f = 1990 MHz, IDQ =500 mA)
P1dB
60
70
—
W
Ruggedness
(VDD =28V, POUT =60W CW, IDQ = 350 mA, f = 1930 MHz,
VSWR = 10:1 [all phase angles])
Ψ
No degradation in output
power.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AGR19060EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
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| AGR19090EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR19090EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
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