- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42888 > AGR21180EU S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | AGR21180EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-4 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 603K |
| 代理商： | AGR21180EU |
Agere Systems Inc.
5
Preliminary Data Sheet
AGR21180E
November 2003
180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Test Conditions:
28 VDS, IDQ = 1600 mA.
Two W-CDMA carriers, F1 = 2135 MHz and F2 = 2145 MHz each carrier has 8.98 dB P/A ratio @ 0.01% CCDF, 3.84 MHz channel BW (CBW).
Figure 4. Power Gain, Drain Efficiency, ACPR, and IM3 vs. Output Power (2 W-CDMA carrier data)
Test Conditions:
28 VDS, IDQ = 1600 mA, POUT = 38 W (average).
Two W-CDMA carriers, each carrier has 8.98 dB P/A @ 0.01% probability (CCDF), F1 = FTEST - 5 MHz and F2 = FTEST + 5 MHz , 3.84 MHz
CBW.
Figure 5. Power Gain, Drain Efficiency, ACPR, IM3, and IRL vs. Frequency (2 W-CDMA signal data)
0
5
10
15
20
25
30
35
40
45
1
10
100
POUT (W, average)
η
(%),
G
PS
(d
B
)
-70
-60
-50
-40
-30
-20
-10
0
AC
PR
(
d
Bc
),
IM3
(
d
Bc
)
GPS
η
ACPR
IM3
0
5
10
15
20
25
30
2040
2070
2100
2130
2160
2190
2220
2250
FTEST (MHz)
η
(%),
G
PS
(d
B
)
-42
-35
-28
-21
-14
-7
0
A
C
P
R
(d
B
c
),
I
M
3
(d
B
c
),
I
R
L
(d
B
)
ACPR
IM3
IRL
GPS
η
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AGRA10EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGRA10EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AP4532GM | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| APM2023NUC-TRG | 7 A, 20 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| APM2023NUC-TRL | 7 A, 20 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR21N090EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26125E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR26125EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR26125EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。