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| 型號： | AK7716VT |
| 英文描述： | Consumer IC |
| 中文描述： | 消費(fèi)性IC |
| 文件頁數(shù)： | 46/60頁 |
| 文件大?。?/td> | 1171K |
| 代理商： | AK7716VT |
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[ASAHI KASEI]
[AK7716]
<M0057-E-01>
1999/09
- 46 -
7-3-b)
OFRAM rewrite preparation and write (during RUN phase)
This function is used to rewrite OFRAM (offset RAM) during program execution. After inputting the command code, you can input a
maximum of 16 data bytes of a continuous address you want to rewrite.
Then input the write command code and rewrite the leading address. Every time the RAM address to be rewritten is specified, the contents
of RAM are rewritten. The following is an example to show how five data bytes from address "10" of the coefficient RAM are rewritten:
Offset RAM execution address 7 8 9 10 11 13 16 11 12 13 14 15
a
a
a
a
a
Rewrite position
￡
￡
á
￡
￡
￡
Note that address "13" is not executed until address "12" is rewritten.
Data transfer procedure
* Preparation for rewrite
Command code 98h ( 1 0 0 0 1 1 0 0 0 )
Data (D23 . . . . . . D16)
Data (D15 . . . . . . D8 )
Data ( D7 . . . . . . D0 )
* Rewrite
Command code 94h ( 1 0 0 0 1 0 1 0 0 )
Address ( 0 0 A5A4 . . . A0)
RDY
RESET = “H”
10011000 D23 . . . D0 10010100 00A5 . . .A0
SI
SCLK
RQ
OFRAM rewriting preparation and writing
AL
Longer of (16-n) x 2 MCLK
(n: number of data) and AL
max 200ns
RDYLG Note
Note: The RDY signal will go to high within the maximum of two LRCLKs if the RDYLG width
is programmed to ensure a new address to be rewritten within one sampling cycle.
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