參數(shù)資料
型號(hào): AM29BL802C90RZK
廠商: Spansion Inc.
英文描述: 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
中文描述: 8兆位(512畝× 16位)的CMOS 3.0伏特,只有突發(fā)模式閃存
文件頁(yè)數(shù): 30/46頁(yè)
文件大小: 466K
代理商: AM29BL802C90RZK
28
Am29BL802C
22371C7 November 3, 2006
D A T A S H E E T
TEST CONDITIONS
Table 6.
Test Specifications
Key to Switching Waveforms
2.7 k
Ω
C
L
6.2 k
Ω
3.3 V
Device
Under
Test
Figure 13.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
65R,
70R
90R,
120R
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 14.
Input Waveforms and Measurement Levels
相關(guān)PDF資料
PDF描述
AM29BL802CB-120R 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL802CB-65R 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL802CB-70R 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL802CB-90R 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
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