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參數(shù)資料
| 型號： | AM29BL802C90RZK |
| 廠商： | Spansion Inc. |
| 英文描述： | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory |
| 中文描述： | 8兆位（512畝× 16位）的CMOS 3.0伏特，只有突發(fā)模式閃存 |
| 文件頁數(shù)： | 43/46頁 |
| 文件大?。?/td> | 466K |
| 代理商： | AM29BL802C90RZK |
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November 3, 2006 22371C7
Am29BL802C
41
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 3.0 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 4 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
SSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
* For reference only. BSC is an ANSI standard for Basic Space Centering.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
5
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
45
s
Word Programming Time
9
360
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
9
27
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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