參數(shù)資料
型號: Am29LV004BT-70EE
廠商: Advanced Micro Devices, Inc.
英文描述: Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 200pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
中文描述: 4兆位(512畝× 8位)的CMOS 3.0伏,只引導扇區(qū)閃存
文件頁數(shù): 30/40頁
文件大?。?/td> 769K
代理商: AM29LV004BT-70EE
Am29LV004B
29
AC CHARACTERISTICS
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
AS
t
WPH
t
VCS
555h
PA
PA
Read Status Data (last two cycles)
A0h
t
CS
Status
D
OUT
Program Command Sequence (last two cycles)
RY/BY#
t
RB
t
BUSY
t
CH
PA
Note:
PA = program address, PD = program data, D
OUT
is the true data at the program address.
Figure 15.
Program Operation Timings
相關PDF資料
PDF描述
AM29LV004BB-120EC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120EE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120EI 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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