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參數(shù)資料
| 型號(hào)： | Am29LV004BT-70EE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 200pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500 |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 40/40頁(yè) |
| 文件大?。?/td> | 769K |
| 代理商： | AM29LV004BT-70EE |
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Am29LV004B
39
REVISION SUMMARY
Revision A (January 1998)
Initial release.
Revision B (June 1998)
Expanded data sheet from Advanced Information to
Preliminary version.
Distinctive Characteristics
Changed
“Manufactured on 0.35 μm process technology”
to “Manufactured on 0.32 μm process technology”.
General Description
Second paragraph:
Changed “This device is manufac-
tured using AMD’s 0.35 μm process technology” to
“This device is manufactured using AMD’s 0.32 μm
process technology”.
Revision C (January 1999)
Global
Removed the -80 speed option.
Distinctive Characteristics
Added bullet for 20-year data retention at 125
°
C.
DC Characteristics—CMOS Compatible
I
CC1
, I
CC2
, I
CC3
, I
CC4
, I
CC5
: Added Note 2 “Maximum
I
CC
specifications are tested with V
CC
= V
CCmax
”.
Revision D (November 18, 1999)
AC Characteristics—Figure 15. Program
Operations Timing and Figure 16. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D+1 (November 13, 2000)
Global
Added table of contents. Deleted burn-in option from
Ordering Information section.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV004BB-120EC | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV004BB-120EE | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV004BB-120EI | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV004BB-120FC | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV004BB-120FE | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV004BT-90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV008BB-120ECT | 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B |
| AM29LV008BB-120ED | 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB |
| AM29LV008BB-120ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29LV008BB-80EC | 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B - Bulk |
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