參數(shù)資料
型號: Am29LV004BT-70EE
廠商: Advanced Micro Devices, Inc.
英文描述: Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 200pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
中文描述: 4兆位(512畝× 8位)的CMOS 3.0伏,只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 32/40頁
文件大?。?/td> 769K
代理商: AM29LV004BT-70EE
Am29LV004B
31
AC CHARACTERISTICS
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ0–DQ6
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 17.
Data# Polling Timings (During Embedded Algorithms)
WE#
CE#
OE#
High Z
t
OE
DQ6/DQ2
RY/BY#
t
BUSY
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
t
ACC
t
RC
Valid Data
Valid Status
(stops toggling)
Valid Status
(first read)
(second read)
Valid Status
VA
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 18.
Toggle Bit Timings (During Embedded Algorithms)
相關(guān)PDF資料
PDF描述
AM29LV004BB-120EC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120EE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120EI 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FC 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV004BB-120FE 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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