參數(shù)資料
型號(hào)： AM29LV010B-55ED
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:10Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
中文描述： 128K X 8 FLASH 3V PROM, 55 ns, PDSO32
封裝： LEAD FREE, MO-142BD, TSOP-32
文件頁(yè)數(shù)： 25/37頁(yè)
文件大?。?/td> 967K
代理商： AM29LV010B-55ED
February 24, 2009 22140D7
Am29LV010B
31
D A TA SH EE T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” Section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-55
-70
-90
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
55
70
90
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
20
35
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time (Note 1)
Min
0
ns
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
30
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
Programming Operation (Note 2)
Typ
9
s
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
Note:
The system can use OE# or CE# to toggle DQ2/DQ6. DQ2 toggles only when read at an address within an erase-suspended
sector.
Figure 16.
DQ2 vs. DQ6
Enter
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Program
Resume
Embedded
Erasing
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV010B-55JCT 制造商:Spansion 功能描述:1M (128KX8) 3V, UNIFORM SECTOR, PLCC32, COM, T&R - Tape and Reel
AM29LV010B-70ED 制造商:Spansion 功能描述:IC SM FLASH 3V 1MB
AM29LV010B-70ED 制造商:Spansion 功能描述:FLASH MEMORY IC
AM29LV010B-70EI 制造商:Advanced Micro Devices 功能描述:
AM29LV010B-70JC 制造商:ADV-MICRO-DEV 功能描述:
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