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參數(shù)資料
| 型號： | AM29LV081B-90EK |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | 8兆位（1米× 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃存 |
| 文件頁數(shù)： | 3/40頁 |
| 文件大?。?/td> | 438K |
| 代理商： | AM29LV081B-90EK |
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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21525
Rev:
D
Amendment:
6
Issue Date:
October 12, 2006
Am29LV081B
8 Megabit (1 M x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
■
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29LV081 device
■
High performance
— Access times as fast as 70 ns
■
Ultra low power consumption (typical values at 5
MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■
Flexible sector architecture
— Sixteen 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 1,000,000 write cycle guarantee
per sector
■
20-year data retention at 125
°
C
— Reliable operation for the life of the system
■
Package option
— 40-pin TSOP
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
■
Command sequence optimized for mass storage
— Specific addresses not required for unlock cycles
The Am29LV081B is not offered for new designs. Please contact a Spansion representative for alternates.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV116BT-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV116DB-70EI | 制造商:Spansion 功能描述: |
| AM29LV116DB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV116DT-70EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8 70ns 40-Pin TSOP |
| AM29LV116DT-90EI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述: |
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