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參數(shù)資料
| 型號： | AM29LV081B-90EK |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | 8兆位（1米× 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃存 |
| 文件頁數(shù)： | 39/40頁 |
| 文件大?。?/td> | 438K |
| 代理商： | AM29LV081B-90EK |
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21525D6
October 12, 2006
Am29LV081B
37
D AT A S H E E T
REVISION SUMMARY
Revision A (December 1997)
First release.
Revision B (July 1998)
Expanded data sheet from Advanced Information to
Preliminary version.
Distinctive Characteristics
Changed “Manufactured on 0.35 μm process technology”
to “Manufactured on 0.32 μm process technology”.
General Description
Second paragraph:
Changed “This device is manufac-
tured using AMD’s 0.35 μm process technology” to
“This device is manufactured using AMD’s 0.32 μm
process technology”.
Revision C (January 1999)
Distinctive Characteristics
Added the following bullet: 20-year data retention at
125
°
C.
Ordering Information
Valid Combinations:
Replaced Am29LV081B-100 with
Am29LV081B-90.
DC Characteristics—CMOS Compatible
I
CC1
, I
CC2
, I
CC3
, I
CC4
, I
CC5
: Added Note 2 “Maximum
I
CC
specifications are tested with V
CC
= V
CCmax
”.
Revision C+1 (May 17, 1999)
Global
In title of data sheet and in ordering information sec-
tion, changed “sector erase” to “uniform sector.”
Revision D (November 19, 1999)
AC Characteristics—Figure 15. Program
Operations Timing and Figure 16. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Corrected “TSR048—48-Pin Reverse TSOP” to
“TSR040—40-Pin Reverse TSOP”.
Revision D+1 (November 8, 2000)
Global
Deleted burn-in option from Ordering Information sec-
tion. Added table of contents.
Revision D+2 (September 4, 2003)
Ordering Information
Added Pb-free compliant package and Pb-free pack-
age to industrial temperature ordering options.
Revision D+3 (June 4, 2004)
Ordering Information
Added Pb-free OPNs.
Revision D+4 (January 4, 2006)
Deleted TSR 40-pin Reverse TSOP option.
Revision D5 (September 12, 2006)
Erase and Program Operations table
Changed t
BUSY
to a maximum specification.
Revision D6 (October 12, 2006)
Global
Added notice on product availability.
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| AM29LV102BB-90EI | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
| AM29LV102BB-55RJC | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
| Am29LV102BB-55RJCB | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
| Am29LV102BB-55RJE | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
| Am29LV102BB-90EEB | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
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| AM29LV116DB-90EC | 制造商:Advanced Micro Devices 功能描述: |
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| AM29LV116DT-90EI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述: |
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