參數(shù)資料
型號(hào)： Am29LV160MT90
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述： 16兆位（2米× 8位/ 1個(gè)M x 16位），3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 3/60頁(yè)
文件大?。?/td> 1849K
代理商： AM29LV160MT90
Publication Number
25974
Revision
B
Amendment
0
Issue Date
August 11, 2003
PRELIMINARY
Am29LV160M
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit
TM
3.0 Volt-only Boot Sector Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantages
S ingle pow er supply operation
— 3 V for read, erase, and program operations
Manufactured on 0.23 μm MirrorBit
T M
process
technology
— Fully compatible with Am29LV160D device
S ecSi
T M
( S ecured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-
one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and thirty-
one 32 Kword sectors (word mode)
Compatibility w ith J EDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
Top or bottom boot block configurations available
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125
°
C
Performance Characteristics
High performance
— Access times as fast as 70 ns
— 0.7 s typical sector erase time
Low pow er consumption ( typical values at 5 MHz)
— 400 nA standby mode current
— 15 mA read current
— 40 mA program/erase current
— 400 nA Automatic Sleep mode current
Package options
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
— 48-pin TSOP
Softw are Features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardw are Features
— Sector Protection: hardware-level method of
preventing write operations within a sector
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
相關(guān)PDF資料
PDF描述
AM29LV160M 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT100PCI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB30EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB50FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB50PCI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
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