參數(shù)資料
型號: Am29LV160MT90
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16兆位(2米× 8位/ 1個M x 16位),3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 60/60頁
文件大小: 1849K
代理商: AM29LV160MT90
58
Am29LV160M
25974B0 August 11, 2003
P r e l i m i n a r y
Physical Dimensions
Corrected Fortified BGA drawing to FBA048.
Revision A+3 (January 6, 2003)
Global
Deleted references to WP# and ACC. The Am29LV160M does not offer those
features.
Command Definitions table
Deleted references to write buffers. This device does not offer that feature.
AC Characteristics
Erase and Program Operations table; Alternate CE# Controlled Erase/Operations
table:
Changed t
WHWH1
to TBD.
Revision A+4 (June 16, 2003)
Global
Changed status from Advance Information to Preliminary.
Modified speed options available.
Product Selector Guide
Added Note #2.
Ordering I nformation
Corrected OPN tables and added Note.
SecSi ( Secured Silicon) Sector Flash Memory Region
Replaced text in this section.
Command Definitions
Modified Legend.
Erase/ Program Operations and Alternate CE# Controlled Erase/
Program Operations
Inserted values for all TBD.
Erase and Programming Performance
Inserted values for all TBD.
Revision B (August 11, 2003)
Global
Modified speed options available. Converted document formatting to Spansion
template. Changed data sheet status from Advance Information to Preliminary.
Trademarks and Notice
This document contains FASL confidential information. The contents of this document may not be copied nor duplicated in any form, in whole or in part,
without prior written consent from FASL. The information in this document is subject to change without notice. Product and Company names are trademarks
or registered trademarks of their respective owners
Copyright 2003 FASL LLC. All rights reserved.
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